Entity — GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor)
Gallium-nitride high-electron-mobility transistor. One of the devices modeled in this article; physically different from Si MOSFET in its C_ds.
Key Characteristics
- No PN-junction body diode: C_ds is not dominated by a PN junction.
- C_ds has two components: the metal geometric capacitance C_metal (high-voltage asymptote) and the 2DEG field-plate depletion capacitance C_2DEG (see 2deg).
- C_ds(V_DS) is described by a sigmoidal/Hill form: C_metal + C_2DEG/[1+(V_DS/V_trans)^k], k≈2.5.
Modeling Notes
See non-linear-capacitance-extraction.
Related
- power-mosfet — comparison device
- 2deg — physical basis
- power-semiconductor-modeling