Entity — Power MOSFET (Power MOSFET)

Power Metal-Oxide-Semiconductor Field-Effect Transistor. One of the devices modeled in this article.

Key Characteristics (relevant to modeling)

Has a PN-junction body diode; C_ds is dominated mainly by the PN-junction depletion region (unlike GaN).
Small-signal capacitances: C_iss = C_gs + C_gd, C_oss = C_ds + C_gd, C_rss = C_gd.
Large-signal behavior: C_gd spikes sharply as V_DS→0V; a Miller plateau exists.